Measurements of adherence of residually stressed thin films by indentation. II. Experiments with ZnO/Si

作者: C. Rossington , A. G. Evans , D. B. Marshall , B. T. Khuri‐Yakub

DOI: 10.1063/1.333795

关键词:

摘要: Indentation‐induced delamination between thin films of ZnO and Si substrates is examined. Delamination occurs by the growth lateral cracks, either along interface or within film adjacent to interface. The crack path determined indenter load thickness, as well residual stresses formed during deposition. A change in from film, accompanied an increase radius, observed interpreted a buckling‐induced stress intensification. fracture toughness estimated relative lengths buckled unbuckled films.

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