作者: Harrison W. Fuller , Donald L. Sullivan
DOI: 10.1063/1.1728600
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摘要: This paper discusses some magnetostatic interactions between two thin films that are separated by a small distance parallel film planes. The external field of domain wall in one is calculated using simple model, and the effect this on second adjacent determined. conditions investigated under which first together with an can cause nucleation film. interaction energy movable stationary or linear imperfection models. equilibrium position as function externally applied then Means for electrically modifying degree investigated. Experimental results presented illustrating aforementioned interactions. long narrow domains achieved use wall, scratch imperfection, edge influence controlled motion demonstrated. A comparison theory experiment made. Mention made how subject might be utilized new information storage devices.