作者: Francesco Pulvirenti , Amedeo La Scala , Salvatore Pennisi
DOI: 10.1109/ISCAS.2012.6271749
关键词:
摘要: We describe an active circuit that can be used as a low-voltage bypass element and profitably replace the Schottky diodes in photovoltaic (PV) panels. The proposed solution is made up of power MOS device with its embedded driving circuitry. whole does not require dedicated DC fully compatible standard CMOS technologies. A prototype fabricated experimentally characterized. Compared to conventional dissipation reduced by more than 70%. Due simplicity, integrated even directly on panel.