Kinetics of titanium silicide formation by rapid thermal processing

摘要: Auger electron spectroscopy (depth profiling and line shape analysis), X-ray diffraction, cross-sectional transmission microscopy were employed to investigate the kinetics of titanium silicide formation by rapid thermal annealing in N2 Ar ambients. A is formed within only a few seconds at 620°–700°C. All analysis techniques utilized reveal that silicides primarily consist sequential TiSi2 TiSi phases. The metastable, poorly-conducting C49 modification. growth was evaluated quantitatively shown be limited diffusion Si through silicide. For N2, phase stabilized compared annealing; additionally nitride forms near surface grows inward another diffusion-limited process. When TiN reaction fronts approach available Ti consumed for these reactions; further can occur via complex transformations. ratio activation energies both processes measured be\(Q_{{\text{TiSi}}_{\text{2}} } /Q_{{\text{TiN}}} = 0.8 \pm 0.2\), approximate agreement with literature data. role impurities will discussed.