Method of filling an opening in a material layer with an insulating material
作者： Karsten Wieczorek , Michael Raab , Stephan Kruegel
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摘要: The filling of sub-0.25 μm trenches with dielectric material may lead to the formation a void. Typically, void be closed by oxidation. When trench includes non-oxidizable sidewall portions, insufficient closure result. Therefore, an oxidizable spacer layer is conformally deposited prior depositing bulk dielectric, so that sidewalls oxidized along entire depth trench, thereby allowing complete
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