Semiconductor controlled rectifiers for electrostatic discharge protection
作者： Byung-gook Park , Ki-whan Song , Jong-duk Lee
DOI:
关键词:
摘要: A silicon controlled rectifier (SCR) may include a first well and second formed within substrate. junction region be the well. third portion fourth gate electrode on substrate between region. fifth of
lens.org 参考文章(5)
Gordon W. Motley, ESD protection for IC's ,(1994)
Timothy J. Maloney, Electrostatic discharge protection circuits using biased and terminated pnp transistor chains ,(1995)
Phillip Czeslaw Jozwiak, Markus Paul Josef Mergens, John Armer, Cornelius Christian Russ, Electrostatic discharge (esd) protection device with simultaneous and distributed self-biasing for multi-finger turn-on ,(2002)
Ming-Dou Ker, Chien-Hui Chung, Hsin-Chin Jiang, Electrostatic discharge protection for a mixed-voltage device using a stacked-transistor- triggered silicon controlled rectifier ,(2001)