Dose determination of nickel implantations in silicon wafers
作者： H. Bubert , P. Burba , R. Klockenk�mper , A. Sch�nborn , M. Wielunski
DOI: 10.1007/BF00321556
关键词:
摘要: The dose of nickel ions implanted with an energy 300 keV or 6 MeV, respectively, into silicon wafers was measured by X-ray fluorescence analysis (XRFA) after the implantation process. Dose values for Ni were determined within range from 5×1015 to 1×1018 ions/cm2. detection limit this simple and non-destructive procedure amounts about 1014 atoms/cm2. accuracy confirmed flame atomic absorption spectrometry (FAAS), total-reflection (TXRFA), Rutherford-backscattering spectroscopy (RBS). study confirms XRFA be a suitable method determinations
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