Characterization of the Interface Between Metal Contacts and Epilayers of Doped Silicon Carbide
作者： M. A. George , D. J. Larkin , J. Petit , A. Burger , S. H. Morgan
DOI: 10.1557/PROC-405-513
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摘要: Aluminum contacts on chemical vapor deposited (CVD) SiC films were studied to examine variations in the chemical, morphological and electrical properties of samples. Nitrogen aluminum doped substrates prepared give n-type p-type epilayers respectively. These preparations examined by surface sensitive spectroscopies atomic force microscopy (AFM). Samples both before after deposition compare differences between SiC(p++)/metal SiC(n++)/metal contact interfacial properties. has generally been found have good adherence n+ epilayer but do not form ohmic contacts, while metal p+ had poor provide better character. AFM images revealed nanometer sized clusters, attributed excess Si epilayers, no clusters observed epilayers. XPS studies as-prepared samples indicated that higher concentrations oxides which may enhance adhesion. The composition morphology is discussed correlated obtained for various
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