Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices
作者： Byungjin Cho , Jin-Mun Yun , Sunghoon Song , Yongsung Ji , Dong-Yu Kim
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摘要: We demonstrate bipolar switching of organic resistive memory devices consisting Ag/polymer/heavily-doped p-type poly Si junctions in an 8 × cross-bar array structure. The bistable mechanism appears to be related the formation and rupture highly conductive paths, as shown by a direct observation Ag metallic bridges using transmission electron microscopy energy-dispersive X-ray spectroscopy. Current images high- low-conducting states acquired conducting atomic force also support this filamentary mechanism. can described electrochemical redox reaction model Ag. Our results may applied other kinds materials presenting similar properties, contributing optimization device scaling or performance improvement.
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