作者: Xinjian Feng , Thomas J. LaTempa , James I. Basham , Gopal K. Mor , Oomman K. Varghese
DOI: 10.1021/NL903886E
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摘要: Tantalum nitride (Ta3N5) has a band gap of approximately 2.07 eV, suitable for collecting more than 45% the incident solar spectrum energy. We describe simple method scale fabrication highly oriented Ta3N5 nanotube array films, by anodization tantalum foil to achieve vertically oxide arrays followed 700 °C ammonia anneal sample crystallization and nitridation. The thin walled amorphous structure enables transformation from occur at relatively low temperatures, while high-temperature annealing related structural aggregation that commonly occurs in particle films is avoided. In 1 M KOH solution, under AM 1.5 illumination with 0.5 V dc bias typical (nanotube length ≈ 240 nm, wall thickness 7 nm) visible light photon conversion efficiencies (IPCE) as high 5.3% were obtained. enhanced activity combination ordered one-dimensional nanoarchitecture makes ar...