Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre‐structured sapphire substrates using a SiNx interlayer and HVPE overgrowth
作者： Marian Caliebe , Tobias Meisch , Benjamin Neuschl , Sebastian Bauer , Jeffrey Helbing
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摘要: In this article two methods for improvements of (112) oriented semipolar GaN grown by MOVPE on prestructured sapphire substrates are investigated. The integration a SiNx interlayer helps to obtain better crystal quality. Also the overgrowth samples HVPE is way smoother surface. A high incorporation oxygen (11-22) compared (0001) was observed. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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