Optoelectronic performance of multilayer WSe 2 transistors enhanced by defect engineering

作者: Jintao Hong , Mengchen Wang , Jie Jiang , Peng Zheng , Hui Zheng

DOI: 10.35848/1882-0786/AB8F13

关键词:

摘要: The presence of defects leads to a significant impact on the optical and electrical properties TMDCs. photoelectric performance TMDCs can be tailored through defect engineering. In this work, we study engineering by using controlled annealing in air as an approach improve photodetector based multilayer WSe2. responsivity EQE WSe2 show obvious improvement after annealing. Furthermore, displays fast response order tens ms enhanced attributed trapping photogating effect.

参考文章(33)
Wenjing Zhang, Ming-Hui Chiu, Chang-Hsiao Chen, Wei Chen, Lain-Jong Li, Andrew Thye Shen Wee, Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers ACS Nano. ,vol. 8, pp. 8653- 8661 ,(2014) , 10.1021/NN503521C
Junpeng Lu, Alexandra Carvalho, Xinhui Kim Chan, Hongwei Liu, Bo Liu, Eng Soon Tok, Kian Ping Loh, A. H. Castro Neto, Chorng Haur Sow, Atomic healing of defects in transition metal dichalcogenides. Nano Letters. ,vol. 15, pp. 3524- 3532 ,(2015) , 10.1021/ACS.NANOLETT.5B00952
Seo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, Jaeho Jeon, Min Hwan Jeon, Gwangwe Yoo, Jinok Kim, Jaehyeong Lee, Geun Young Yeom, Sungjoo Lee, Hyun-Yong Yu, Changhwan Choi, Jin-Hong Park, A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique Advanced Materials. ,vol. 28, pp. 4824- 4831 ,(2016) , 10.1002/ADMA.201600032
Bilu Liu, Yuqiang Ma, Anyi Zhang, Liang Chen, Ahmad N. Abbas, Yihang Liu, Chenfei Shen, Haochuan Wan, Chongwu Zhou, High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions. ACS Nano. ,vol. 10, pp. 5153- 5160 ,(2016) , 10.1021/ACSNANO.6B00527
Nihar R. Pradhan, Jonathan Ludwig, Zhengguang Lu, Daniel Rhodes, Michael M. Bishop, Komalavalli Thirunavukkuarasu, Stephen A. McGill, Dmitry Smirnov, Luis Balicas, High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors. ACS Applied Materials & Interfaces. ,vol. 7, pp. 12080- 12088 ,(2015) , 10.1021/ACSAMI.5B02264
Mingqiang Huang, Mingliang Wang, Cheng Chen, Zongwei Ma, Xuefei Li, Junbo Han, Yanqing Wu, Broadband Black-Phosphorus Photodetectors with High Responsivity. Advanced Materials. ,vol. 28, pp. 3481- 3485 ,(2016) , 10.1002/ADMA.201506352
Zhangting Wu, Zhongzhong Luo, Yuting Shen, Weiwei Zhao, Wenhui Wang, Haiyan Nan, Xitao Guo, Litao Sun, Xinran Wang, Yumeng You, Zhenhua Ni, Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation Nano Research. ,vol. 9, pp. 3622- 3631 ,(2016) , 10.1007/S12274-016-1232-5
Chao Xie, Chunhin Mak, Xiaoming Tao, Feng Yan, Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene Advanced Functional Materials. ,vol. 27, pp. 1603886- ,(2017) , 10.1002/ADFM.201603886
Mengxing Sun, Qiyi Fang, Dan Xie, Yilin Sun, Liu Qian, Jianlong Xu, Peng Xiao, Changjiu Teng, Weiwei Li, Tianling Ren, Yanfeng Zhang, Heterostructured graphene quantum dot/WSe 2 /Si photodetector with suppressed dark current and improved detectivity Nano Research. ,vol. 11, pp. 3233- 3243 ,(2018) , 10.1007/S12274-017-1855-1
Duc Anh Nguyen, Hye Min Oh, Ngoc Thanh Duong, Seungho Bang, Seok Jun Yoon, Mun Seok Jeong, None, Highly Enhanced Photoresponsivity of a Monolayer WSe2 Photodetector with Nitrogen-Doped Graphene Quantum Dots. ACS Applied Materials & Interfaces. ,vol. 10, pp. 10322- 10329 ,(2018) , 10.1021/ACSAMI.7B18419