Graphene-based switching elements using a diamond-shaped nano-patch and interconnecting nano-ribbons

摘要: The use of diamond-shaped graphene nano-patches as novel non-volatile switching elements exhibiting transitions between high and low conductance states based on changes magnetic ordering these states. Non-magnetic reconstructed nano-ribbons are used non-invasive leads to implement the carbon-nanoflake memories transistors. Switching may be implemented by electric-field-induced altering state. Graphene nano-patch shapes certain geometries provide passive electric-field sources such establish initial bits information saved in graphene-based memories.