Backside illuminated CMOS image sensor
作者： Szu-An Wu , Shiu-Ko Jangjian , Volume Chien
DOI:
关键词:
摘要: A backside illuminated CMOS image sensor comprises a photo active region formed over substrate using front side ion implantation process and an extended adjacent to the region, wherein is by process. The may further comprise laser annealed layer on of substrate. helps increase number photons converted into electrons so as improve quantum efficiency.
lens.org 参考文章(13)
Hsun-Ying Huang, Shou Shu Lu, Horng-Daw Shen, Jia-ren Chen, Chi-Yuan Liang, Cheng-Tsung Chen, Yu-Ping Chen, Chi-Hsun Hsieh, Yung-Cheng Chang, Juan-Lin Chen, Yung-Fu Yeh, Co-implant for backside illumination sensor ,(2011)
Vincent Venezia, Hidetoshi Nozaki, Duli Mao, Hsin-Chih Tai, Sohei Manabe, Howard E. Rhodes, Yin Qian, Image sensor with low electrical cross-talk ,(2008)
Hidetoshi Nozaki, Howard E. Rhodes, Backside illuminated imaging sensor with backside p+ doped layer ,(2008)
Howard E. Rhodes, CMOS image sensor with improved backside surface treatment ,(2008)
Byung-Jun Park, Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels ,(2008)
Vincent Venezia, Duli Mao, Hsin-Chih Tai, Wei Zheng, Howard E. Rhodes, Yin Qian, Backside illuminated image sensor with stressed film ,(2010)
Hidetoshi Nozaki, Sohei Manabe, Howard E. Rhodes, Image sensor and pixel including a deep photodetector ,(2008)
Shinji Uya, Toru Hachiya, Masanori Nagase, Yosuke Nakahashi, Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device ,(2007)
Hideo Kanbe, Takayuki Ezaki, Teruo Hirayama, Solid-state image device and production method thereof ,(2005)