The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

摘要: Promising application of thin-film technology is the synthesis SiC, possessing such valuable properties as high hardness (33400 Mn/m2), chemical resistance, melting point (2830°C), wide bandgap (2.3–3.3 eV), etc (Lindner , 2003). Unfortunately, since it still difficult to grow SiC material crystalline quality meet requirements for a large scale industrial application, small-size and high-cost wafers severely limit their applications at present (Liangdeng et al., 2008). Doped with different impurities, silicon carbide used in semiconductor (Yаn 2000; Chen Field-effect transistors, diodes other electronic devices based on have several advantages compared similar devices. Among them, opportunity work temperatures up 600°C, speed radiation resistance. A number polytypes makes possible create heteropolytype structures (Lebedev 2001, 2002a, 2005) form defect-free, near-perfect contacts unusual (Fissel 2001; Lebedev 2002b; Semenov 2010). Diode been established 2002b), which value uncompensated donors Nd−Na was (1.7−2)×1017 сす-3 layer (n) 6H-SiC acceptors Na−Nd ~ 3×1018 (p) 3C-SiC. In spectrum electroluminescence revealed two bands maxima h┥max ≈ 2.9 eV (430 nm) 2.3 (540 nm), close band gaps 6H-and Currently, using methods vacuum sublimation (Savkina 2000), molecular beam epitaxy 1996), epitaxial layers cubic 3C-SiC hexagonal 6H-SiC, 4H-SiC substrates are grown. By vapor deposition (CVD) (Nishino 2002) grown heteroepitaxial Si. At below 1200°C there conditions growth both polyand nanocrystalline degrees crystallinity structure polytype Such were realized magnetron sputtering (Kerdiles Sun 1998), laser ablation (Spillman 2000) plasma (Liao 2005), plasma-enhanced (George 2002; Pajagopalan 2000). 1500°C direct carbon ions an energy ~100 eV, films consistent set 3C, 21R, 27R, 51R, 6H (Semenov 2008, 2009, Photoluminescence from front surface film