Optical phonon scattering on electronic mobility in Al 2 O 3 /AlGaN/AlN/GaN heterostructures
作者： X.J. Zhou , Y. Qu , S.L. Ban , Z.P. Wang
DOI: 10.1016/J.SPMI.2017.08.042
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摘要: Abstract Considering the built-in electric fields and two-mode property of transverse optical phonons in AlGaN material, electronic eigen-energies wave functions are obtained by solving Schrodinger equation with finite difference method. The dispersion relations potentials given transfer matrix mobility two dimensional electron gas influenced Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on theory Lei-Ting force balance equation. It found that scattering from half-space main factor affecting mobility, influence other can be ignored. results show decreases increasing thicknesses Al2O3 AlN layers, but there no definite relationship between thickness barrier. obviously reduced Al component crystal to effect ternary mixed crystals important. also increases first then as increment fixed charges, always temperature. constructed here good candidates metal-oxide-semiconductor high-electron-mobility-transistors since they have higher due interface weakened interlayer.
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