Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures
作者： V. V. Afanas’ev , M. Houssa , A. Stesmans
DOI: 10.1007/978-1-4614-7909-3_9
关键词:
摘要: This chapter overviews charge properties of oxide and interface paramagnetic defects in semiconductor/oxide entities, primarily Si/SiO2, as revealed by correlative analysis electron spin resonance data electrical analysis. The role dangling bond degradation phenomena induced bias-temperature stress or irradiation is discussed. In particular, the importance hydrogen/proton-mediated interactions underlined on basis available experimental evidence.
springer.com
sci-hub.st 参考文章(95)
A. Stesmans, B. Nouwen, V. V. Afanas’ev, P b 1 interface defect in thermal ( 100 ) S i / S i O 2 : 29 Si hyperfine interaction Physical Review B. ,vol. 58, pp. 15801- 15809 ,(1998) , 10.1103/PHYSREVB.58.15801
M. Houssa, G. Pourtois, M. Caymax, M. Meuris, M. M. Heyns, V. V. Afanas’ev, A. Stesmans, Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2 Applied Physics Letters. ,vol. 93, pp. 161909- ,(2008) , 10.1063/1.3006320
G. Buscarino, S. Agnello, F. M. Gelardi, Delocalized Nature of the E' δ Center in Amorphous Silicon Dioxide Physical Review Letters. ,vol. 94, pp. 125501- 125501 ,(2005) , 10.1103/PHYSREVLETT.94.125501
V. V. Afanas’ev, M. Houssa, A. Stesmans, L. Souriau, R. Loo, M. Meuris, Electronic properties of Ge dangling bond centers at Si1−xGex/SiO2 interfaces Applied Physics Letters. ,vol. 95, pp. 222106- ,(2009) , 10.1063/1.3266853
V. V. Afanas’ev, A. Stesmans, Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2 Journal of Applied Physics. ,vol. 95, pp. 2518- 2526 ,(2004) , 10.1063/1.1641521
V.V. Afanas'ev, J.M.M. de Nijs, P. Balk, The role of hydrogen in the action of fluorine in SiSiO2 structures Journal of Non-crystalline Solids. ,vol. 187, pp. 248- 252 ,(1995) , 10.1016/0022-3093(95)00144-1
J. P. Campbell, P. M. Lenahan, Density of states of Pb1 Si/SiO2 interface trap centers Applied Physics Letters. ,vol. 80, pp. 1945- 1947 ,(2002) , 10.1063/1.1461053
A. Stesmans, V. V. Afanas'ev, THERMALLY INDUCED INTERFACE DEGRADATION IN (111) SI/SIO2 TRACED BY ELECTRON SPIN RESONANCE Physical Review B. ,vol. 54, ,(1996) , 10.1103/PHYSREVB.54.R11129
Valery V. Afanas'ev, Chapter 4 – Internal Photoemission Spectroscopy Methods Internal Photoemission Spectroscopy#R##N#Principles and Applications. pp. 67- 106 ,(2008) , 10.1016/B978-008045145-9.50007-1
V. V Afanas'ev, A Stesmans, Proton nature of radiation-induced positive charge in SiO2 layers on Si EPL. ,vol. 53, pp. 233- 239 ,(2001) , 10.1209/EPL/I2001-00142-5