作者: Chun-Tse Chou , Boris Hudec , Chung-Wei Hsu , Wei-Li Lai , Chih-Cheng Chang
DOI: 10.1016/J.MICROREL.2015.04.002
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摘要: Abstract In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need electro-forming and compliance, (4) data retention time over 104 s, (5) robust READ WRITE disturb immunity. Finally, an achievable size of 1 Mb was simulated All-LPU read scheme V/3 write scheme.