Method of physical vapor deposition of metal oxides on semiconductors
作者： David P. Norton
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摘要: A process for growing a metal oxide thin film upon semiconductor surface with physical vapor deposition technique in high-vacuum environment and structure formed the involves steps of heating introducing hydrogen gas into to develop conditions at which are favorable desired yet is unfavorable formation any native oxides semiconductor. More specifically, temperature ratio partial pressure water within vacuum high enough render on thermodynamically unstable not so that unstable. Having established these conditions, constituent atoms be deposited directed toward by come rest as no surface/thin interface. An example this method includes an epitaxial (001)-oriented CeO 2 overlying substrate (001) Ge.
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