Reliability experimentation of 1200 V SiC power n -MOSFETs by accelerated thermal aging and bias temperature instability

摘要: This paper describes reliability experiments on 1200 V SiC power n-MOSFETs manufactured by three different manufacturers utilizing two mechanisms: accelerated thermal aging and bias temperature instability. Each of the devices was electrically tested for evaluating variation pre- post-stress I–V characteristics. Pre-stress evaluation threshold voltage (Vth) 25 cycles showed transient behavior a saturation toward an average value. For test, were stressed at 120 °C 200 h 3.33% significant shift in (Vth). instability measurement, 20 V applied across gate–source terminals. 96.7% device, Vth demonstrated increment with stressing time movement saturation.