Comparative study of the band-offset ratio of conventionally strained and strain-compensated InGaAs/GaAs QW lasers
作者： Hüseyin Toktamiş , Beşire Gönül , Murat Oduncuoğlu
DOI: 10.1016/J.PHYSE.2004.03.020
关键词:
摘要: In order to achieve good high temperature laser performance, it is essential have very deep electron wells. InGaAs system on GaAs substrate suffers from poor characteristics due the overflow over rather small conduction band offset. By means of Harrison's model, we investigate effect strain compensation alignments InGaAs/GaAs and show that improves this system. The use GaAsP or InGaP barrier instead results strain-compensated having better alignment than conventionally strained InGaAs. Therefore, operation has been anticipated in these systems with compensated barriers hole confinement as a result increased offset more favorable ratio.
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