Enhanced gate dielectric for a field effect device with a trenched gate
作者： Lin Cheng , Anant Kumar Agarwal , John Williams Palmour , Daniel Jenner Lichtenwalner
DOI:
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摘要: The present disclosure relates to a silicon carbide (SiC) field effect device that has gate assembly formed in trench. includes dielectric is an layer, which deposited along the inside surface of trench and over dielectric. extends into body from top bottom side walls extend thickness layer on approximately equal or greater than
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