Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2
作者： Yaojia Wang , Lizheng Wang , Xiaowei Liu , Heng Wu , Pengfei Wang
DOI: 10.1021/ACS.NANOLETT.9B01275
关键词:
摘要: Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding underlying mechanism, which is still under debate. Here, we explicitly identify dominant physical origin MR through situ tuning magneto-transport properties thin WTe2 film. With an electrostatic doping approach, observed a nonmonotonic gate dependence MR. The reaches maximum (10600%) film at certain voltage where electron and hole concentrations are balanced, indicating that charge compensation mechanism Besides, show temperature-dependent exhibits similar tendency with carrier mobility when retained, revealing distinct scattering mechanisms may be play for temperature properties. Our work would helpful MR...
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