Method and apparatus for writing and erasing flash memory

作者: Michael J. Seibert

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摘要: A DRAM-compatible nonvolatile memory includes a FLASH and logic controller. The logical controller accepts conventional DRAM command protocol data addresses from address buses, respectively. responds to repeated CAS-before-RAS signals write enable signal initiate block erases writes the memory. nonvolatile, is incorporated in package having same pin structure as package, such that can be mounted mount, socket. Because share common data, address, lines with DRAMs, single card produced containing both DRAMs memories.

参考文章(8)
Brian L. Dipert, Lily C. Pao, David M. Brown, Markus A. Levy, Kurt B. Robinson, Russell D. Eslick, Flash memory card including plural flash memories and circuitry for selectively outputting ready/busy signals in different operating modes ,(1994)
Kumar Venkatasubramaniam, Richard G. Bahr, Michael E. Anderson, David Alexander, Martin M. Deneroff, High memory capacity DRAM SIMM ,(1993)
Clinton C K Kuo, Column and row erasable eeprom ,(1982)
David L. Taylor, Integrated RAM/EAROM memory system ,(1981)
Arudo Roda, Roberuto Petsuritsuchiari, Jiyuriano Furijierio, BILE ACID DERIVATIVE, ITS PRODUCTION AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME ,(1989)
Okuda Yoshimitsu, SEMICONDUCTOR MEMORY DEVICE ,(1991)