Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface
作者： M.-H. Cho , D.-H. Ko , Y. G. Choi , K. Jeong , I. W. Lyo
DOI: 10.1116/1.1331296
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摘要: Heteroepitaxial Y2O3 films were grown on oxidized and clean Si (100) surfaces by ion assisted evaporation under an ultrahigh vacuum. The crystalline structure, crystallinity, morphology, electrical properties investigated using various techniques. crystallinity assessed x-ray diffraction Rutherford backscattering spectroscopy shows that the substrates have better smoother morphology compared to those Si. As annealing temperature increases, are stable for Si, while of degrade. difference between two is attributed formation hillocks a chemical reaction at interface film SiO2. low strain change, excess Y in contribute structure hillock. These changes crysta...
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