Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

摘要: In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with [In]/[Zn] ratio varying between 0.01 0.05 were synthesized sol–gel method structural properties analyzed. effect of different dopant concentrations electrical, optical, morphological has investigated. obtained ZnO:In at room temperature are polycrystalline a hexagonal structure highly preferred orientation c-axis perpendicular to substrate. Scanning electron microscopy atomic force applied for morphology characterization films' cross-section surface. results revealed typical columnar very smooth Films good optical transmittance, around 85%, within visible wavelength region, low resistivity in range 10− 3 Ω·cm high mobility 4 cm2/Vs, produced substrate temperature. On other hand, we studied position p–n junction involved Au/In2O3:SnO2/ZnO:In(n)/c-Si(p)/Al beam induced current. Current density–voltage characterizations dark under illumination also performed. cell exhibits efficiency 6%.