Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications
作者： E. Herth , B. Legrand , L. Buchaillot , N. Rolland , T. Lasri
DOI: 10.1016/J.MICROREL.2010.04.011
关键词:
摘要: Abstract This paper presents the correlation between optical properties and chemical electrical of amorphous silicon nitride (SiNX:H) films prepared by reactor Plasma-Enhanced Chemical Vapor Deposition (PECVD). The effects temperature mixture gases (NH3/SiH4/N2) on these dielectric are investigated in this study. Silane (SiH4) ammonia (NH3) used as reactive species, while nitrogen (N2) is a dilution gas. A particular focus made improvement that strongly correlated to physicochemical bonds properties. incorporation N2 leads deposition rate hydrogen content reductions film. An optimal with obtained improve breakdown voltage at low temperature, 200 °C. Fundamental fabricated characterized their elemental composition, specification, residual stress, results experimentally show film can be some key parameters for reliability semiconductor, microsystems applications.
archives-ouvertes.fr
elsevier.com
sci-hub.se 参考文章(24)
Gabriel M. Rebeiz, RF MEMS: Theory, Design, and Technology ,(2003)
Ling Wang, Zheng Cui, Jia-Sheng Hong, Eamon P. McErlean, Robert B. Greed, Daniel C. Voyce, Fabrication of high power RF MEMS switches Microelectronic Engineering. ,vol. 83, pp. 1418- 1420 ,(2006) , 10.1016/J.MEE.2006.01.067
E. Cianci, A. Schina, A. Minotti, S. Quaresima, V. Foglietti, Dual frequency PECVD silicon nitride for fabrication of CMUTs' membranes Sensors and Actuators A-physical. ,vol. 127, pp. 80- 87 ,(2006) , 10.1016/J.SNA.2005.11.053
S. Ali, M. Gharghi, S. Sivoththaman, K. Zeaiter, Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation Journal of Materials Science. ,vol. 40, pp. 1469- 1473 ,(2005) , 10.1007/S10853-005-0585-Z
SC Mao, SH Tao, YL Xu, XW Sun, MB Yu, GQ Lo, DL Kwong, None, Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module. Optics Express. ,vol. 16, pp. 20809- 20816 ,(2008) , 10.1364/OE.16.020809
D. V. Tsu, G. Lucovsky, M. J. Mantini, Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition Physical Review B. ,vol. 33, pp. 7069- 7076 ,(1986) , 10.1103/PHYSREVB.33.7069
G.E. Jellison, Jr, F.A. Modine, P. Doshi, A. Rohatgi, Spectroscopic ellipsometry characterization of thin-film silicon nitride Thin Solid Films. ,vol. 313, pp. 193- 197 ,(1998) , 10.1016/S0040-6090(97)00816-X
K.-H. Allers, Prediction of dielectric reliability from I–V characteristics: Poole–Frenkel conduction mechanism leading to √E model for silicon nitride MIM capacitor Microelectronics Reliability. ,vol. 44, pp. 411- 423 ,(2004) , 10.1016/J.MICROREL.2003.12.007
Jung-Jie Huang, Chan-Jui Liu, Hung-Chien Lin, Cheng-Ju Tsai, Yung-Pei Chen, Guo-Ren Hu, Cheng-Chung Lee, Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors Journal of Physics D. ,vol. 41, pp. 245502- ,(2008) , 10.1088/0022-3727/41/24/245502
K.D. Leedy, R.E. Strawser, R. Cortez, J.L. Ebel, Thin-Film Encapsulated RF MEMS Switches IEEE\/ASME Journal of Microelectromechanical Systems. ,vol. 16, pp. 304- 309 ,(2007) , 10.1109/JMEMS.2007.892915