Preparation method and application of photoelectrochemical aflatoxin B1 sensor based on tungsten trioxide composite material

摘要: The invention relates to a preparation method and application of photoelectrochemical aflatoxin B1 sensor based on tungsten trioxide composite material, belongs the field sensors. comprises following steps: synthesizing rectangular WO3 nanoflake fluorine doped tin oxide FTO substrate by using wet chemical method; then closely combining TiO2 nano-thorn with unique structure bath deposition carrying out double matching between an energy band lattice structureof enhance photoelectric response stability WO3; upper p-type narrow bandgap semiconductor Ag2O nanoparticles in situ growth method, thusobtaining material WO3/TiO2/Ag2O remarkably improved activity. shows excellent visible light activity presence glutathione. An antibody, bovine serum albumin antigen are assembled into layer-by-layer self-assembly ultra-sensitive detection is realized utilizing specific combination which great significance for analysis B1.