Elimination of dislocations in bulk GaAs crystals grown by liquid‐phase electroepitaxy
作者： C. F. Boucher , O. Ueda , T. Bryskiewicz , J. Lagowski , H. C. Gatos
DOI: 10.1063/1.338831
关键词:
摘要: The dislocation density in bulk GaAs crystals (up to 4 mm thick) grown by liquid‐phase electroepitaxy (LPEE) is found be significantly reduced (by as much a factor of 20) relative that the substrate. This reduction takes place when thickness growing crystal exceeds critical value 50–70 μm. It accompanied formation misfit arrays identified transmission electron microscopy interface region between substrate and crystals. These findings suggest caused small but finite lattice mismatch epitaxial‐quality relatively inferior quality melt‐grown Dislocations which propagate from into LPEE are forced stress move laterally forming dislocations.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(17)
S. Miyazawa, Y. Ishii, Dislocations as the origin of threshold voltage scatterings for GaAs MESFET on LEC-grown semi-insulating GaAs substrate IEEE Transactions on Electron Devices. ,vol. 31, pp. 1057- 1062 ,(1984) , 10.1109/T-ED.1984.21660
L. Jastrzebski, J. Lagowski, H. C. Gatos, A. F. Witt, Liquid‐phase electroepitaxy: Growth kinetics Journal of Applied Physics. ,vol. 49, pp. 5909- 5919 ,(1978) , 10.1063/1.324557
Takao Takenaka, Hiroshi Hayashi, Saburoh Yamamoto, Kazuhisa Murata, Toshio Inoguchi, Etch Pit Study of GaAs{001} LPE Layer by Molten KOH Japanese Journal of Applied Physics. ,vol. 17, pp. 447- 448 ,(1978) , 10.1143/JJAP.17.447
G. Jacob, M. Duseaux, J.P. Farges, M.M.B. van den Boom, P.J. Roksnoer, Dislocation-free GaAs and InP crystals by isoelectronic doping Journal of Crystal Growth. ,vol. 61, pp. 417- 424 ,(1983) , 10.1016/0022-0248(83)90383-4
Hiroki Kohda, Kohji Yamada, Hideo Nakanishi, Takashi Kobayashi, Jiro Osaka, Keigo Hoshikawa, Crystal growth of completely dislocation-free and striation-free GaAs Journal of Crystal Growth. ,vol. 71, pp. 813- 816 ,(1985) , 10.1016/0022-0248(85)90399-9
Yasumasa Okada, Yozo Tokumaru, Yoshinori Kadota, Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs Applied Physics Letters. ,vol. 48, pp. 975- 977 ,(1986) , 10.1063/1.96628
H. R. Potts, G. L. Pearson, Annealing and Arsenic Overpressure Experiments on Defects in Gallium Arsenide Journal of Applied Physics. ,vol. 37, pp. 2098- 2103 ,(1966) , 10.1063/1.1708715
M.G. Mil'vidsky, V.B. Osvensky, S.S. Shifrin, Effect of doping on formation of dislocation structure in semiconductor crystals Journal of Crystal Growth. ,vol. 52, pp. 396- 403 ,(1981) , 10.1016/0022-0248(81)90225-6
Martin Weinstein, H. E. LaBelle, A. I. Mlavsky, Dislocations in Gallium Arsenide Grown from Gallium by a Travelling Solvent Method Journal of Applied Physics. ,vol. 37, pp. 2913- 2914 ,(1966) , 10.1063/1.1782153
Vincent F.S. Yip, William R. Wilcox, Dislocation elimination in THM growth of GaAs Journal of Crystal Growth. ,vol. 36, pp. 29- 35 ,(1976) , 10.1016/0022-0248(76)90210-4