High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se2 surface
作者： B Canava , J Vigneron , A Etcheberry , J.F Guillemoles , D Lincot
DOI: 10.1016/S0169-4332(02)00186-1
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摘要: Abstract Chemistry of co-evaporated Cu(In, Ga)Se2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us compare the composition with bulk one as a function treatments. We also studied too several standard compounds Cu2−xSe, In2Se3, ZnSe, Se0 and CdSe. A Se XPS signal specific CIGS identified. In this paper, we present detailed study in show different spectroscopic contributions can be separated using standards information. Then, discuss origin these signals implications for device processing.
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