Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
作者： H. L. Störmer , A. C. Gossard , W. Wiegmann , K. Baldwin
DOI: 10.1063/1.92604
关键词:
摘要: The electron mobility of single modulation‐doped GaAs‐(AlGa)As heterojunctions is strongly dependent on density and Al concentration. A low‐temperature persistent photoconductive effect employed to vary the areal continuously within a sample by nearly factor 3. Over this range increases monotonically as much 4, quasilinear with density. At equivalent carrier concentrations lower concentration show higher mobilities. low temperatures peak 365 000 cm2/Vs found at an 7.0×1011 cm−2 interparticle spacing three‐dimensional 5.9×1017 cm−3.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(16)
H. L. Störmer, A. Pinczuk, A. C. Gossard, W. Wiegmann, Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices Applied Physics Letters. ,vol. 38, pp. 691- 693 ,(1981) , 10.1063/1.92481
Takashi Mimura, Satoshi Hiyamizu, Toshio Fujii, Kazuo Nanbu, A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions Japanese Journal of Applied Physics. ,vol. 19, ,(1980) , 10.1143/JJAP.19.L225
D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron, J. Chaplart, Nuyen T. Linh, Two-dimensional electron gas m.e.s.f.e.t. structure Electronics Letters. ,vol. 16, pp. 667- 668 ,(1980) , 10.1049/EL:19800473
Satoshi Hiyamizu, Takashi Mimura, Toshio Fujii, Kazuo Nanbu, Hisao Hashimoto, Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE Japanese Journal of Applied Physics. ,vol. 20, pp. L245- L248 ,(1981) , 10.1143/JJAP.20.L245
C. Weisbuch, R. Dingle, P. M. Petroff, A. C. Gossard, W. Wiegmann, Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature Applied Physics Letters. ,vol. 38, pp. 840- 842 ,(1981) , 10.1063/1.92212
D. C. Tsui, R. A. Logan, Observation of two‐dimensional electrons in LPE‐grown GaAs‐AlxGa1−xAs heterojunctions Applied Physics Letters. ,vol. 35, pp. 99- 101 ,(1979) , 10.1063/1.91040
C. M. Wolfe, G. E. Stillman, W. T. Lindley, Electron Mobility in High‐Purity GaAs Journal of Applied Physics. ,vol. 41, pp. 3088- 3091 ,(1970) , 10.1063/1.1659368
S. Judaprawira, W.I. Wang, P.C. Chao, C.E.C. Wood, D.W. Woodard, L.F. Eastman, Modulation-doped MBE GaAs/n-Al x Ga 1-x As MESFETs IEEE Electron Device Letters. ,vol. 2, pp. 14- 15 ,(1981) , 10.1109/EDL.1981.25322
S. Hiyamizu, T. Mimura, T. Fujii, K. Nanb, High mobility of two‐dimensional electrons at the GaAs/n‐AlGaAs heterojunction interface Applied Physics Letters. ,vol. 37, pp. 805- 807 ,(1980) , 10.1063/1.92088
T. J. Drummond, H. Morkoç, A. Y. Cho, Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures Journal of Applied Physics. ,vol. 52, pp. 1380- 1386 ,(1981) , 10.1063/1.329769