Method for high deposition rate solder electroplating on a microelectronic workpiece

摘要: The present invention is directed to an improved electroplating method, chemistry, and apparatus for selectively depositing tin/lead solder bumps other structures at a high deposition rate pursuant manufacturing microelectronic device from workpiece, such as semiconductor wafer. An plating on workpiece in accordance with one aspect of the comprises reactor chamber containing solution having free ions tin lead onto workpiece. A chemical delivery system used deliver flow rate. support that includes contact assembly providing power surface side be plated. contacts large plurality discrete points isolated exposure solution. anode, preferably consumable spaced within reaction In embodiment concentration compound, water methane sulfonic acid.