作者: Chong-an Di , Gui Yu , Yunqi Liu , Xinjun Xu , Dacheng Wei
DOI: 10.1021/JA066092V
关键词:
摘要: The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source− drain (D− S) …