Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing
作者： Tiecheng Li , Congxiao Liu , Jihong Chen , Guoliang Peng , Fengfeng Luo
DOI: 10.1109/TMAG.2014.2375852
关键词:
摘要: Mn-implanted Si with postannealing treatment at 873, 973, 1073, and 1173 K exhibited ferromagnetism room temperature. Ferromagnetism was enhanced as the annealing temperature increased. The largest value of saturation magnetization found in sample annealed K. X-ray absorption near-edge structure spectra showed no formation substitutional–interstitial Mn–Mn dimmers all samples. On other hand, high-resolution transmission electron microscopy glancing incidence diffraction revealed a variety MnSi compounds. We propose that has origin from MnSi1.7 nanoparticles well 1:1 phase, which possesses strong short-range spin correlation. antiferromagnetic Mn5Si3 compound 873 973 samples substantially reduced magnetism. This paper provides new insights into understanding diluted magnetic semiconductors.
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