作者: M.J. Zhuo , B.P. Uberuaga , L. Yan , E.G. Fu , R.M. Dickerson
DOI: 10.1016/J.JNUCMAT.2012.05.027
关键词:
摘要: Abstract Epitaxial anatase TiO 2 films with thickness of around 300 nm were deposited on SrTiO 3 and irradiated 250 keV Ne ions at room temperature. X-ray diffraction, Rutherford backscattering spectrometry, transmission electron microscopy used to characterize the microstructural changes under irradiation. Two primary features are observed in material: a damaged layer high density nano-sized defects including dislocation loops was film and, near / interface, defect denuded zone formed side while an amorphous side. Atomistic calculations attribute formation both defect-denuded interfacial not interaction between irradiation induced hetero-interface but rather differences chemical potential mobilities for each two phases.