Anisotropic electromechanical properties of GaN ceramics caused by polarisation

摘要: Abstract Based on three-point bending tests and finite element modelling, effects of polarisation directions are investigated the mechanical electrical properties GaN piezoelectric semiconductor ceramics (PSCs). It is shown that leads to anisotropic electromechanical PSCs. For samples polarised along vertical direction, their conductive capabilities enhance by nearly 50%, however, there almost no changes in ones with horizontal polarisation. Bending strengths increase 11.6% because charges driven direction under loading. correlation between mobility largely affects fracture toughness These experimental findings indicate that, contrast traditional ceramics, can be tailored through directions.