Polythiophene-perylene diimide heterojunction field-effect transistors

摘要: Thin film field-effect transistors based on binary blends of poly(3-hexylthiophene) (P3HT) and two perylene diimide (PDI) derivatives with different alkyl substituents have been investigated in terms device performance, microstructure molecular organization the surface. For same blend ratios PDIs phase separate differently due to solubility variation. Blends a horizontal separation between donor acceptor show ambipolar behavior well defined homogenous pathways for both charge carriers. In this layer arrangement polymer is located near dielectric interface, while PDI molecules crystallize top film. Interestingly, electron mobility improved by few orders magnitude comparison pure acceptor. This increase attributed altered blends. Layers which crystals are embedded within matrix not interconnected each other lead only hole transport transistor. one ratio, improves order compared P3HT as result reorganization layer. study provides new insights into role carrier heterojunction development high-performance future devices.