Fin fet devices from bulk semiconductor and method for forming
作者： David M Fried , Devendra K Sadana , Edward J Nowak , Beth Ann Rainey
DOI:
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摘要: The present invention thus provides a device structure and method for forming fin (210) Field Effect Transistors (FETs) from bulk semiconductor wafers (200) while providing improved wafer to uniformity. Specifically, the height control layer (212), such as damaged portion of substrate or marker layer, which uniformity height. Additionally, isolation (214) between fins also optimization narrowing width by selective oxidation (212) relative an oxidized (216) sidewalk. methods provide advantages uniform finFET fabrication using cost effect wafers.
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