High mobility C60 organic field-effect transistors
作者： N.J. Haddock , B. Domercq , B. Kippelen
DOI: 10.1049/EL:20057199
关键词:
摘要: Organic field-effect transistors incorporating the electron transport material C60 as active semiconductor have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum mobility was found to be 0.65 cm2/Vs, comparable state-of-the-art value measured ultra-high-vacuum
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