Long-range Finnis–Sinclair potentials
作者： A. P. Sutton , J. Chen
DOI: 10.1080/09500839008206493
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摘要: Abstract Finnis–Sinclair potentials are developed for computer simulations in which van der Waals type interactions between well separated atomic clusters as important the description of metallic bonding at short range. The always favour f.c.c. and h.c.p. structures over b.c.c. structure. They display convenient scaling properties both length energy, a number perfect crystal may be derived analytically.
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