Subwavelength engineering in silicon photonics

作者: JH Schmid , P Cheben , D-X Xu , S Janz , J Lapointe

DOI: 10.1109/PIERS.2016.7734470

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摘要: Subwavelength engineering in silicon photonic integrated circuits is a powerful design tool that allows one to synthesize an effective medium with adjustable refractive index. This creates new degree of freedom circuit design. We present overview the fundamental concept and its application address several important practical challenges implementation photonics as next generation platform for telecom, datacom sensing. In particular, we report our results developing highly efficient broadband fiber-chip couplers wire waveguides using subwavelength engineered edge coupling structures. experimentally demonstrate efficiency −0.4 dB polarization independent operation broad spectral range exceeding 100 nm optical fiber core diameter 3.2 µm. For standard SMF-28 10.4 µm mode field numerically overlayer structure composed SiO 2 Si 3 N 4 which exhibits overall 90%. have also used experiments conventional In- GaAsP/InP buried heterostructure laser at λ = 1.3 measured near size 2.1 µm×2.8 Peak 1.5 1-dB alignment tolerance approximately ±1.2 horizontally ±0.8 vertically. further grating fabricated single-etch step telecom (1.55 µm) (1.3 wavelengths efficiencies −0.5 dB. Further applications will be discussed include waveguide crossings, microspectrometers, ultra-fast switches, athermal waveguides, evanescent sensors, rotators colorless interference couplers.

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