Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
作者： Zhenghe Jin , Xiaodong Li , Jeffrey T. Mullen , Ki Wook Kim
DOI: 10.1103/PHYSREVB.90.045422
关键词:
摘要: Intrinsic electron-and hole-phonon interactions are investigated in monolayer transition-metal dichalcogenides MX 2 (M= Mo, W; X= S, Se) based on a density functional theory …
harvard.edu
arxiv.org
arxiv-vanity.com参考文章(21)
J.A. Wilson, A.D. Yoffe, The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties Advances in Physics. ,vol. 18, pp. 193- 335 ,(1969) , 10.1080/00018736900101307
R.H. Friend, A.D. Yoffe, Electronic properties of intercalation complexes of the transition metal dichalcogenides Advances in Physics. ,vol. 36, pp. 1- 94 ,(1987) , 10.1080/00018738700101951
Priya Johari, Vivek B. Shenoy, Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. ACS Nano. ,vol. 6, pp. 5449- 5456 ,(2012) , 10.1021/NN301320R
Qing Hua Wang, Kourosh Kalantar-Zadeh, Andras Kis, Jonathan N. Coleman, Michael S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nature Nanotechnology. ,vol. 7, pp. 699- 712 ,(2012) , 10.1038/NNANO.2012.193
Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam, Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides arXiv: Mesoscale and Nanoscale Physics. ,(2014) , 10.1021/NN500064S
Matin Amani, Matthew L. Chin, A. Glen Birdwell, Terrance P. O’Regan, Sina Najmaei, Zheng Liu, Pulickel M. Ajayan, Jun Lou, Madan Dubey, Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Applied Physics Letters. ,vol. 102, pp. 193107- ,(2013) , 10.1063/1.4804546
Branimir Radisavljevic, Andras Kis, Mobility engineering and a metal–insulator transition in monolayer MoS 2 Nature Materials. ,vol. 12, pp. 815- 820 ,(2013) , 10.1038/NMAT3687
V. Podzorov, M. E. Gershenson, Ch. Kloc, R. Zeis, E. Bucher, High-mobility field-effect transistors based on transition metal dichalcogenides Applied Physics Letters. ,vol. 84, pp. 3301- 3303 ,(2004) , 10.1063/1.1723695
Hui Fang, Steven Chuang, Ting Chia Chang, Kuniharu Takei, Toshitake Takahashi, Ali Javey, High-performance single layered WSe₂ p-FETs with chemically doped contacts. Nano Letters. ,vol. 12, pp. 3788- 3792 ,(2012) , 10.1021/NL301702R
Wei Liu, Jiahao Kang, Deblina Sarkar, Yasin Khatami, Debdeep Jena, Kaustav Banerjee, Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors Nano Letters. ,vol. 13, pp. 1983- 1990 ,(2013) , 10.1021/NL304777E