An innovative way of etching MoS 2 : Characterization and mechanistic investigation
作者： Gavin Kok Wai Koon , Weijie Zhao , A. H. Castro Neto , A. H. Castro Neto , Chengmin Shen
DOI: 10.1007/S12274-013-0296-8
关键词:
摘要: We report a systematic study of the etching MoS2 crystals by using XeF2 as gaseous reactant. By controlling process, monolayer with uniform morphology can be obtained. The Raman and photoluminescence spectra resulting material were similar to those exfoliated MoS2. Utilizing this strategy, different patterns such Hall bar structure hexagonal array realized. Furthermore, mechanism was studied introducing graphene an mask. believe our technique opens easy controllable way MoS2, which used fabricate complex nanostructures, nanoribbons, quantum dots, transistor structures. This process also extended other interesting two-dimensional crystals.
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