Effects of Coulomb interactions on the electronic structure of the Si(001) surface
作者： Thibaut Vinchon , Marie-Catherine Desjonquères , Andrzej M. Oleś , Daniel Spanjaard
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摘要: The electronic structure of the Si(001) surface is obtained with a tight-binding method developed in slab geometry. effects local Coulomb interactions on stability antiferromagnetic solutions and width gap states at reconstructed symmetric dimers are first visualized two-orbital model Hamiltonian. It allows us to study effect coupling between dangling bonding orbitals. calculation performed supports results provides an explanation semiconducting character
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