Erratum: “Fabrication of non-polar GaN based highly responsive and fast UV photodetector” [Appl. Phys. Lett. 110, 103507 (2017)]

摘要: We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown r-plane (1–102) sapphire substrate. High crystalline leads to formation two faceted triangular islands like structures surface. The fabricated GaN exhibited a high responsivity 340 mA/W at 5 V bias room temperature which is best performance reported for a-GaN/r-sapphire films. A detectivity 1.24 × 109 Jones and noise equivalent power 2.4 × 10−11 WHz−1/2 were also attained. rise time decay 280 ms 450 ms have been calculated, respectively, fastest response times photodetector. Such devices substantiate that can serve as an excellent photoconductive material based applications.