Mn- and Cr-Doped InN: A Promising Diluted Magnetic Semiconductor Material
作者： A. Ney , R. Rajaram , R. F. C. Farrow , J. S. Harris , S. S. P. Parkin
DOI: 10.1007/S10948-005-2148-6
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摘要: Cr- and Mn-doped InN films were successfully grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Low temperature GaN buffer layers metal-organic vapor-phase used to accommodate the large lattice mismatch between sapphire. A high n-type carrier concentration of 1.5×1020 cm−3 was measured in with 3% Cr-doping. Films this type exhibit a well-defined in-plane magnetic hysteresis loop remanence for temperatures varying from 5 300K. The films, however, turned out less clear properties. Thus, ferromagnetism Cr-doped can be concluded our measurements.
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