A new mesa-etching technique for gallium arsenide
作者： B. M. Arora , V. T. Karulkar , S. Guha
DOI: 10.1007/BF00550468
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摘要:
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sci-hub.se 参考文章(3)
R. W. Hoisty, Photoetching and Plating of Gallium Arsenide Journal of The Electrochemical Society. ,vol. 108, pp. 790- 794 ,(1961) , 10.1149/1.2428218
N. Braslau, J.B. Gunn, J.L. Staples, Metal-semiconductor contacts for GaAs bulk effect devices Solid-state Electronics. ,vol. 10, pp. 381- 383 ,(1967) , 10.1016/0038-1101(67)90037-8
C. A. Miller, J. B. Shuttleworth, Shaped mesas on gallium arsenide Journal of Materials Science. ,vol. 6, pp. 1231- 1232 ,(1971) , 10.1007/BF00550098