Chemisorption on Semiconductor Surfaces
作者： J. A. Appelbaum , D. R. Hamann
DOI: 10.1007/978-3-642-81431-0_3
关键词:
摘要: The close contact between theory and experiment in semiconductor surface studies has shaped the form of recent theoretical to a large extent. As result, these have concentrated on specific substrate surfaces adsorbates, with little attention “generalized” models. systems were typically chosen bases simplicity experimental accessibility. These criteria led concentration low index surfaces, ordered adsorbed layers simple unit cells. Since independent-electron models, correlation treated an averaged way [3.1,2] proven adequate interpret experiment, there been work specifically many-body effects [3.3].
springer.com
sci-hub.st 参考文章(78)
P. W. Chye, I. A. Babalola, T. Sukegawa, W. E. Spicer, GaSb Surfaces States and Schottky-Barrier Pinning Physical Review Letters. ,vol. 35, pp. 1602- 1604 ,(1975) , 10.1103/PHYSREVLETT.35.1602
S.J White, D.P Woodruff, The surface structure of Si(100) surfaces using averaged leed: I. The(1 × 1)H structure Surface Science. ,vol. 63, pp. 254- 262 ,(1977) , 10.1016/0039-6028(77)90342-9
Marvin L. Cohen, Volker Heine, The Fitting of Pseudopotentials to Experimental Data and Their Subsequent Application Journal of Physics C: Solid State Physics. ,vol. 24, pp. 37- 248 ,(1970) , 10.1016/S0081-1947(08)60070-3
Robert Thomas Sanderson, Chemical Bonds and Bond Energy ,(1976)
Toshio Sakurai, H. D. Hagstrum, Chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surface Physical Review B. ,vol. 12, pp. 5349- 5354 ,(1975) , 10.1103/PHYSREVB.12.5349
Toshio Sakurai, Homer D. Hagstrum, Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1 Physical Review B. ,vol. 14, pp. 1593- 1596 ,(1976) , 10.1103/PHYSREVB.14.1593
D. E. Eastman, J. L. Freeouf, Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors Physical Review Letters. ,vol. 34, pp. 1624- 1627 ,(1975) , 10.1103/PHYSREVLETT.34.1624
Joel A. Appelbaum, D. R. Hamann, Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent Calculation Physical Review Letters. ,vol. 32, pp. 225- 228 ,(1974) , 10.1103/PHYSREVLETT.32.225
M. Schlüter, James R. Chelikowsky, Steven G. Louie, Marvin L. Cohen, Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures Physical Review B. ,vol. 12, pp. 4200- 4214 ,(1975) , 10.1103/PHYSREVB.12.4200
K. C. Pandey, J. C. Phillips, Realistic Tight-Binding Calculations of Surface States of Si and Ge (111) Physical Review Letters. ,vol. 32, pp. 1433- 1436 ,(1974) , 10.1103/PHYSREVLETT.32.1433