作者: P Fochuk , O Panchuk , P Feychuk , L Shcherbak , A Savitskyi
DOI: 10.1016/S0168-9002(00)00926-8
关键词:
摘要: Abstract A brief review of different aspects In atoms in the CdTe lattice behavior, necessary for scientific preparation radiation-sensitive material is presented. Data concerning CdTe–In T – x phase diagram, segregation, diffusion and solubility as function stoichiometric relations temperature are included. Low- high-temperature electrical measurements results discussed framework compensation phenomena. short manufacture In-doped crystals well their practical use