Highly transparent polyimide/nanocrystalline-zirconium dioxide hybrid materials for organic thin film transistor applications

摘要: Abstract A solution-processable high k dielectric materials based on polyimide/zirconium dioxide (PI-ZrO2) for organic thin film transistors (OTFTs) is demonstrated. To study the effect of ZrO2 content properties layer, a series PZn films (n = 0, 2, 5, 8, 10, 12, and 15, which are weight percentage in film) were prepared. The results showed that all prepared hybrid had transmittance 96–99%. nondestructive Zr K-edge XANES analysis revealed absorption intensity was proportional to content. EXAFS indicated formed bigger clusters than solution state. Water diiodomethane contact angle found PZ12 largest angles, lowest surface energy, water absorbance, least structural defects highest carrier mobility. Electrical property constant increased from 4.04 PZ0 8.10 film, but then dropped PZ15 film. All current leakages (−2 MV/cm) less 10−9 A/cm. mobility 2.78 × 10−1, up 4.15 × 10−1 down 3.34 × 10−1 Ion/Ioff ratio 2.3 × 103 PZ0, 1.4 × 105 PZ12, 1.8 × 104 PZ15. devices better performance. This work reveals great potential OTFT applications.